dual igbt nx-series module 200 amperes/1200 volts CM200DX-24S 1 05/13 rev. 5 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com description: powerex igbt modules are designed for use in switching applications. each module consists of two igbt transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: lo w drive power lo w v ce(sat) discrete super-fast recovery free-wheel diode isolat ed baseplate for easy heat sinking applications: a c motor control motion/ser vo control phot ovoltaic/fuel cell ordering information: example: select the complete module number you desire from the table below -i.e. CM200DX-24S is a 1200v (v ces ), 200 ampere dual igbt power module. type current rating v ces amperes v olts (x 50) cm 200 24 outline drawing and circuit diagram dimensions inches millimeters a 5.98 152.0 b 2.44 62.0 c 0.67+0.04/-0.02 17.0+1.0/-0.5 d 5.39 137.0 e 4.79 121.7 f 4.330.02 110.00.5 g 3.89 99.0 h 3.72 94.5 j 0.53 13.5 k 0.15 3.81 l 1.64 41.66 m 0.30 7.75 n 1.95 49.53 p 0.9 22.86 q 0.55 14.0 r 0.87 22.0 s 0.67 17.0 t 0.48 12.0 u 0.24 6.0 v 0.16 4.2 w 0.37 6.5 x 0.83 21.14 y m6 m6 z 1.53 39.0 dimensions inches millimeters aa 1.970.02 50.00.5 ab 2.26 57.5 ac 0.22 dia. 5.5 dia. ad 0.6 1 5.0 ae 0.51 13.0 af 0.27 7 .0 ag 0.03 0.8 ah 0.81 20.5 aj 0.12 3.0 ak 0.14 3.5 al 0.26 6.5 am 0.53 13.5 an 0.15 3.81 ap 0.05 1 .15 aq 0.025 0.65 ar 0.29 7 .4 as 0.05 1 .2 at 0.17 dia. 4.3 dia. au 0.102 dia. 2.6 dia. av 0.088 dia. 2.25 dia. aw 0.12 3.0 ax 0.49 12.5 ay 0.14 3.75 g2(38) c2e1(24) c2e1(23) tr 2 di2 di1 tr 1 es 2(39) e2 (47) c1 (48) th th1 (1) th2 (2) g1(15) cs1(22) es 1(16 ) ntc detail "b" a d e f j j ar z aa ab b ah aj ax aw al am ak ae s as an aq af ag ay at au av ap g h p c x t t s s q r q n v u u w ac (4 places) m ad kk k y (4 places) detail "a" detail "b" detail "a" 12 34 56 78 91 01 11 21 31 41 51 61 71 81 92 02 12 2 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 to lerance otherwise specif ied (mm) the to lerance of siz e betw een te rm inals is assumed to 0.4 division of dimension to lerance 0.5 to 3 0.2 ov er 3 to 6 0.3 ov er 6 to 30 0.5 ov er 30 to 1 20 0.8 ov er 120 to 400 1.2 l
CM200DX-24S dual igbt nx-series module 200 amperes/1200 volts 2 05/13 rev. 5 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com absolute maximum ratings, t j = 25c unless otherwise specifed inverter part igbt/fwdi characteristics symbol rating units collector-emitter voltage (v ge = 0v) v ces 1200 v olts gate-emitter voltage (v ce = 0v) v ges 20 v olts collector current (dc, t c = 119c) *2,*4 i c 200 amper es collector current (pulse) *3 i crm 400 amper es total power dissipation (t c = 25c) *2,*4 p tot 1 500 watts emitter current (t c = 25c) *2 i e *1 200 amper es emitter current (pulse) *3 i erm *1 400 amper es module characteristics symbol rating units isolation voltage (terminals to baseplate, rms, f = 60hz, ac 1 minute) v iso 2500 v olts maximum junction temperature, instantaneous event (overload) t j(max) 175 c maximum case temperature *4 t c(max) 125 c operating junction temperature, continuous operation (under switching) t j(op) -40 t o +150 c storage temperature t stg -40 t o +125 c *1 r epresent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *2 junction temperature (t j ) should not increase beyond maximum junction t emperature (t j(max) ) rating. *3 p ulse width and repetition rate should be such that device junction temperature (t j ) does not e xceed t j(max) rating. *4 c ase temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplat e and the heatsink side just under the chips. r efer to the figure to the right for chip location. the heatsink ther mal resistance should be measured just under the chips. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 0 0 28.2 41.7 38.1 29.1 label side tr1 / tr2: igbt, di1 / di2: fwdi, th: ntc thermistor each mark points to the center position of each chip. th 0 27.9 37.4 41.4 78.4 tr 2 di2 tr 1 di1
CM200DX-24S dual igbt nx-series module 200 amperes/1200 volts 3 05/13 rev. 5 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com electrical characteristics, t j = 25c unless otherwise specifed inverter part igbt/fwdi characteristics symbol test conditions min. typ. max. units collector-emitter cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate-emitter leakage current i ges v ge = v ges , v ce = 0v 0.5 a gate-emitter threshold voltage v ge(th) i c = 20ma, v ce = 10v 5.4 6.0 6.6 volts collector-emitter saturation voltage v ce(sat) i c = 200a, v ge = 15v, t j = 25c *5 1.80 2.25 volts (t erminal) i c = 200a, v ge = 15v, t j = 125c *5 2.00 volts i c = 200a, v ge = 15v, t j = 150c *5 2.05 volts collector-emitter saturation voltage v ce(sat) i c = 200a, v ge = 15v, t j = 25c *5 1.70 2.15 volts (chip) i c = 200a, v ge = 15v, t j = 125c *5 1.90 volts i c = 200a, v ge = 15v, t j = 150c *5 1.95 volts input capacitance c ies 20 nf output capacitance c oes v ce = 10v, v ge = 0v 4.0 nf reverse transfer capacitance c res 0.33 nf gate charge q g v cc = 600v, i c = 200a, v ge = 15v 466 nc turn-on delay time t d(on) 800 ns rise time t r v cc = 600v, i c = 200a, v ge = 15v, 200 ns turn-off delay time t d(off) r g = 0?, inductive load 600 ns fall time t f 300 ns emitter-collector voltage v ec *1 i e = 200a, v ge = 0v, t j = 25c *5 1.80 2.25 volts (t erminal) i e = 200a, v ge = 0v, t j = 125c *5 1.80 volts i e = 200a, v ge = 0v, t j = 150c *5 1.80 volts emitter-collector voltage v ec *1 i e = 200a, v ge = 0v, t j = 25c *5 1.70 2.15 volts (chip) i e = 200a, v ge = 0v, t j = 125c *5 1.70 volts i e = 200a, v ge = 0v, t j = 150c *5 1.70 volts reverse recovery time t rr *1 v cc = 600v, i e = 200a, v ge = 15v 300 ns reverse recovery charge q rr *1 r g = 0?, inductive load 10.7 c turn-on switching energy per pulse e on v cc = 600v, i c = i e = 200a, v ge = 15v 30.7 mj turn-off switching energy per pulse e off r g = 0?, t j = 150c 21.5 mj reverse recovery energy per pulse e rr *1 inductive load 14.2 mj internal lead resistance r cc' + ee' main terminals-chip, 1.1 m? p er switch,t c = 25c *4 internal gate resistance r g per switch 9.8 ? *1 r epresent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *4 c ase temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplat e and the heatsink side just under the chips. r efer to the figure to the right for chip location. the heatsink ther mal resistance should be measured just under the chips. *5 p ulse width and repetition rate should be such as to cause negligible temperature rise. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 0 0 28.2 41.7 38.1 29.1 label side tr1 / tr2: igbt, di1 / di2: fwdi, th: ntc thermistor each mark points to the center position of each chip. th 0 27.9 37.4 41.4 78.4 tr 2 di2 tr 1 di1
CM200DX-24S dual igbt nx-series module 200 amperes/1200 volts 4 05/13 rev. 5 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com electrical characteristics, t j = 25c unless otherwise specifed (continued) ntc thermistor part characteristics symbol test conditions min. typ. max. units zero power resistance r 25 t c = 25c *4 4.85 5.00 5.15 k? deviation of resistance ? r/r t c = 100c *4 , r 100 = 493? -7.3 +7.8 % b constant b (25/50) approximate by equation *6 3375 k power dissipation p 25 t c = 25c *4 10 mw thermal resistance characteristics thermal resistance, junction to case *4 r th(j-c) q per inverter igbt 0.10 k/w thermal resistance, junction to case *4 r th(j-c) d per inverter fwdi 0.19 k/w contact thermal resistance, r th(c-f) thermal grease applied, 15 k/kw case to heatsink *4 per 1 module *7 mechanical characteristics mounting torque m t main terminals, m6 screw 31 35 40 in-lb mounting torque m s mounting to heatsink, m5 screw 22 27 31 in-lb creepage distance d s terminal to terminal 11.55 mm terminal to baseplate 12.32 mm clearance d a terminal to terminal 10.00 mm terminal to baseplate 10.85 mm weight m 350 grams flatness of baseplate e c on centerline x, y *8 0 100 m recommended operating conditons, t a = 25c dc supply voltage v cc applied across p-n terminals 600 850 volts gate-emitter drive voltage v ge(on) applied across 13.5 15.0 16.5 volts g1 -es1/g2-es2 terminals external gate resistance r g per switch 0 22 ? *4 c ase temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplat e and the heatsink side just under the chips. r efer to the figure to the right for chip location. the heatsink ther mal resistance should be measured just under the chips. *6 b (25/50) = in( r 25 )/( 1 C 1 ) r 50 t 25 t 50 r 25 ; resistance at absolute temperature t 25 [k]; t 25 = 25 [c] + 273.15 = 298.15 [k] r 50 ; resistance at absolute temperature t 50 [k]; t 50 = 50 [c] + 273.15 = 323.15 [k] *7 t ypical value is measured by using thermally conductive grease of = 0.9 [w/(m ? k)]. *8 baseplat e (mounting side) flatness measurement points (x, y) are shown in the figure below. heatsink side ? : concave + : convex ? : concave x y + : convex heatsink side 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 0 0 28.2 41.7 38.1 29.1 label side tr1 / tr2: igbt, di1 / di2: fwdi, th: ntc thermistor each mark points to the center position of each chip. th 0 27.9 37.4 41.4 78.4 tr 2 di2 tr 1 di1
CM200DX-24S dual igbt nx-series module 200 amperes/1200 volts 5 05/13 rev. 5 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 1.0 0.5 2.5 1.5 2.0 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (chip - typical) 10 2 10 3 t j = 25c t j = 125c t j = 150c gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage characteristics (chip - typical) 10 6 8 10 1412 16 18 20 8 6 4 2 0 t j = 25c i c = 400a i c = 200a i c = 80a collector-emitter voltage, v ce , (volts) output characteristics (chip - typical) 0 2 4 6 8 10 0 v ge = 20v 10 11 12 13.5 15 9 t j = 25 c 400 100 200 50 150 250 300 350 collector current, i c , (amperes) collector-emitter saturation voltage characteristics (chip - typical) 3.5 2.5 3.0 0 2.0 1.5 0.5 1.0 0 400 300 350 100 200 50 150 250 v ge = 15v t j = 25c t j = 125c t j = 150c emitter current, i e , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts) collector current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts )
CM200DX-24S dual igbt nx-series module 200 amperes/1200 volts 6 05/13 rev. 5 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com collector-emitter voltage, v ce , (volts) capacitance vs. v ce (typical) 10 0 10 2 10 2 10 1 10 0 10 -2 10 -1 10 1 v ge = 0v c ies c oes c res 10 -1 collector current, i c , (amperes) 10 3 10 1 10 2 10 2 10 1 half-bridge switching characteristics (typical) t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 0 t j = 125c inductive load t f 10 3 collector current, i c , (amperes) 10 3 10 1 10 2 10 2 10 1 half-bridge switching characteristics (typical) t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 0 t j = 150c inductive load t f 10 3 external gate resistance, r g , (?) 10 3 10 1 10 2 switching time vs. gate resistance (typical) 10 1 10 -1 10 0 t d(off) t d(on) t r v cc = 600v v ge = 15v i c = 200a t j = 125c inductive load t f 10 2 capacitance, c ies , c oes , c res , (nf) switching time, (ns) switching time, (ns) switching time, (ns)
CM200DX-24S dual igbt nx-series module 200 amperes/1200 volts 7 05/13 rev. 5 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com external gate resistance, r g , (?) 10 3 10 1 10 -1 10 0 10 1 10 2 switching time vs. gate resistance (ypical) t d(off) t d(on) t r v cc = 600v v ge = 15v i c = 200a t j = 150c inductive load t f 10 2 gate charge, q g , (nc) gate charge vs. v ge 20 0 15 10 5 0 100 200 300 700600500400 i c = 200a v cc = 600v emitter current, i e , (amperes) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 2 10 1 10 3 v cc = 600v v ge = 15v r g = 0 t j = 125c inductive load i rr t rr emitter current, i e , (amperes) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 2 10 1 10 3 v cc = 600v v ge = 15v r g = 0 t j = 150c inductive load i rr t rr switching time, (ns) gate-emitter voltage, v ge , (volts) reverse recovery, i rr (a), t rr (ns) reverse recovery, i rr (a), t rr (ns)
CM200DX-24S dual igbt nx-series module 200 amperes/1200 volts 8 05/13 rev. 5 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com gate resistance, r g , (?) 10 2 10 -1 10 0 10 1 10 1 10 0 10 2 half-bridge switching characteristics (typical) v cc = 600v v ge = 15v r g = 0 t j = 125c v cc = 600v v ge = 15v r g = 0 t j = 150c v cc = 600v v ge = 15v i c /i e = 200a t j = 150c collector current, i c , (amperes) emitter current, i e , (amperes) 10 2 10 1 10 0 half-bridge switching characteristics (typical) collector current, i c , (amperes) emitter current, i e , (amperes) 10 2 10 1 10 1 10 2 10 0 10 3 half-bridge switching characteristics (typical) e on e off e rr e on e off e rr e on e off e rr gate resistance, r g , (?) 10 2 10 -1 10 0 10 1 10 1 10 0 10 2 v cc = 600v v ge = 15v i c /i e = 200a t j = 125c e on e off e rr 10 1 10 2 10 3 half-bridge switching characteristics (typical) switching energy, e on , e off , (mj) reverse recovery energy, e rr , (mj) switching energy, e on , e off , (mj) reverse recovery energy, e rr , (mj) switching energy, e on , e off , (mj) reverse recovery energy, e rr , (mj) switching energy, e on , e off , (mj) reverse recovery energy, e rr , (mj)
CM200DX-24S dual igbt nx-series module 200 amperes/1200 volts 9 05/13 rev. 5 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com time, (s) transient thermal impedance characteristics (maximum) 10 0 10 -1 10 -2 10 -3 10 -5 10 -3 10 -4 10 -2 10 -1 10 0 10 1 single pulse t c = 25c per unit base = r th(j-c) = 0.10k/w (igbt) r th(j-c) = 0.19k/w (fwdi) z th = r th ? (normalized value) normalized transient thermal impedance, z th(j-c')
|
